Parallel 2D Axisymmetric Fluid Modeling of CF4 Discharge in an Inductively Coupled Plasma Source During SiO2 Etching

Abstract

A parallel 2D axisymmetric plasma fluid modeling for an inductively coupled plasma source with tetrafluoromethane precursor is reported. In total, 32 species with 96 gas-phase and 27 surface reactions with site-balance equations are considered. The predicted results of major species densities are in reasonable agreement with reported experiments. The etching products, e.g. SiFx and O-2, are found to be appreciable (approximate to 10%) compared to the precursor near the substrate. The predicted density trends, such as CFx+ and CFx (x=1-3), are also consistent with reported experiments. Finally, the predicted etching rate on the SiO2 substrate is presented and discussed in detail.