完整後設資料紀錄
DC 欄位語言
dc.contributor.authorKao, Tzu-Hsuanen_US
dc.contributor.authorChen, Jui-Yuanen_US
dc.contributor.authorChiu, Chung-Huaen_US
dc.contributor.authorHuang, Chun-Weien_US
dc.contributor.authorWu, Wen-Weien_US
dc.date.accessioned2014-12-08T15:35:55Z-
dc.date.available2014-12-08T15:35:55Z-
dc.date.issued2014-03-17en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4869355en_US
dc.identifier.urihttp://hdl.handle.net/11536/24285-
dc.description.abstractP-type ZnO nanowires (NWs) have attracted much attention in the past years due to the potential applications for optoelectronics and piezotronics. In this study, we have synthesized Sb-doped p-type ZnO NWs on Si (100) substrates by chemical vapor deposition with Aucatalyst. The Sb-doped ZnO NWs are single crystalline with high density, grown along [1-1-2] direction. The doping percentage of Sb is about 2.49%, which has been confirmed by X-ray photoelectron spectroscopy. The ZnO NW field effect transistor demonstrated its p-type characteristics. A high responsivity to ultraviolet photodetection was also observed. In addition, compared to intrinsic ZnO NWs, the conductivity of the Sb-doped ZnO NWs exhibited similar to 2 orders of magnitude higher. These properties make the p-type ZnO NWs a promising candidate for electronic and optoelectronic devices. (C) 2014 AIP Publishing LLC.en_US
dc.language.isoen_USen_US
dc.titleOpto-electrical properties of Sb-doped p-type ZnO nanowiresen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.4869355en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume104en_US
dc.citation.issue11en_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000333252300026-
dc.citation.woscount3-
顯示於類別:期刊論文


文件中的檔案:

  1. 000333252300026.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。