GaN-based light-emitting diodes with graphene/indium tin oxide transparent layer

doi:10.1364/OE.22.00A396

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lai, Wei-Chih	en_US
dc.contributor.author	Lin, Chih-Nan	en_US
dc.contributor.author	Lai, Yi-Chun	en_US
dc.contributor.author	Yu, Peichen	en_US
dc.contributor.author	Chi, Gou Chung	en_US
dc.contributor.author	Chang, Shoou-Jinn	en_US
dc.date.accessioned	2014-12-08T15:35:55Z	-
dc.date.available	2014-12-08T15:35:55Z	-
dc.date.issued	2014-03-10	en_US
dc.identifier.issn	1094-4087	en_US
dc.identifier.uri	http://dx.doi.org/10.1364/OE.22.00A396	en_US
dc.identifier.uri	http://hdl.handle.net/11536/24288	-
dc.description.abstract	We have demonstrated a gallium nitride (GaN)-based green light-emitting diode (LED) with graphene/indium tin oxide (ITO) transparent contact. The ohmic characteristic of the p-GaN and graphene/ITO contact could be preformed by annealing at 500 degrees C for 5 min. The specific contact resistance of p-GaN/graphene/ITO (3.72E-3 Omega(center dot)cm(2)) is one order less than that of p-GaN/ITO. In addition, the 20-mA forward voltage of LEDs with graphene/ITO transparent (3.05 V) is 0.09 V lower than that of ITO LEDs (3.14 V). Besides, We have got an output power enhancement of 11% on LEDs with graphene/ITO transparent contact. (C)2014 Optical Society of America	en_US
dc.language.iso	en_US	en_US
dc.title	GaN-based light-emitting diodes with graphene/indium tin oxide transparent layer	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1364/OE.22.00A396	en_US
dc.identifier.journal	OPTICS EXPRESS	en_US
dc.citation.volume	22	en_US
dc.citation.issue	5	en_US
dc.citation.spage	A396	en_US
dc.citation.epage	A401	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000333579200022	-
dc.citation.woscount	3	-
顯示於類別：	期刊論文

文件中的檔案：

000333579200022.pdf

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。