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dc.contributor.authorTsai, Che-Pinen_US
dc.contributor.authorHsu, Shun-Chiehen_US
dc.contributor.authorLin, Shih-Yenen_US
dc.contributor.authorChang, Ching-Wenen_US
dc.contributor.authorTu, Li-Weien_US
dc.contributor.authorChen, Kun-Chengen_US
dc.contributor.authorLay, Tsong-Shengen_US
dc.contributor.authorLin, Chien-chungen_US
dc.date.accessioned2014-12-08T15:35:55Z-
dc.date.available2014-12-08T15:35:55Z-
dc.date.issued2014-03-10en_US
dc.identifier.issn1094-4087en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OE.22.00A359en_US
dc.identifier.urihttp://hdl.handle.net/11536/24290-
dc.description.abstractA type II GaSb quantum ring solar cell is fabricated and measured under the concentrated sunlight. The external quantum efficiency confirms the extended absorption from the quantum rings at long wavelength coinciding with the photoluminescence results. The short-circuit current of the quantum ring devices is 5.1% to 9.9% more than the GaAs reference's under various concentrations. While the quantum ring solar cell does not exceed its GaAs counterpart in efficiency under one-sun, the recovery of the open-circuit voltages at higher concentration helps to reverse the situation. A slightly higher efficiency (10.31% vs. 10.29%) is reported for the quantum ring device against the GaAs one. (C)2014 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleType II GaSb quantum ring solar cells under concentrated sunlighten_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OE.22.00A359en_US
dc.identifier.journalOPTICS EXPRESSen_US
dc.citation.volume22en_US
dc.citation.issue5en_US
dc.citation.spageA359en_US
dc.citation.epageA364en_US
dc.contributor.department光電系統研究所zh_TW
dc.contributor.departmentInstitute of Photonic Systemen_US
dc.identifier.wosnumberWOS:000333579200018-
dc.citation.woscount2-
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