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dc.contributor.authorLiu, SHen_US
dc.contributor.authorShieh, JMen_US
dc.contributor.authorChen, Cen_US
dc.contributor.authorDai, BTen_US
dc.contributor.authorHensen, Ken_US
dc.contributor.authorCheng, SSen_US
dc.date.accessioned2014-12-08T15:36:00Z-
dc.date.available2014-12-08T15:36:00Z-
dc.date.issued2005en_US
dc.identifier.issn1099-0062en_US
dc.identifier.urihttp://hdl.handle.net/11536/24348-
dc.identifier.urihttp://dx.doi.org/10.1149/1.1854124en_US
dc.description.abstractTwo-additive electropolishing (EP) electrolytes exhibit an extremely high planarization-efficiency in Cu damascene schemes, independent of pattern sizes (1- 50 mu m). This electrolyte is demonstrated by adding alcohols and organic acids to the H3PO4 electrolyte. The high wetting ability of alcohols allows such additives to easily access the damascene bottom. This mechanism, assisted by the reduced polishing rate associated with the high surface viscosity caused by alcohol additives, greatly passivates the damascene bottom from elecropolishing. Accordingly, the superpolishing functionality reported by Chang et al. [Electrochem. Solid-State Lett., 6, G72 (2003)] in the two-additive electrolyte outperforms in the one-additive electrolyte. (C) 2005 The Electrochemical Society.en_US
dc.language.isoen_USen_US
dc.titleTwo-additive electrolytes for superplanarizing damascene Cu metalsen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.1854124en_US
dc.identifier.journalELECTROCHEMICAL AND SOLID STATE LETTERSen_US
dc.citation.volume8en_US
dc.citation.issue3en_US
dc.citation.spageC47en_US
dc.citation.epageC50en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000228326400015-
dc.citation.woscount4-
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