標題: Effects of metallic contaminants on the electrical characteristics of ultrathin gate oxides
作者: Pan, TM
Ko, FH
Chao, TS
Chen, CC
Chang-Liao, KS
材料科學與工程學系奈米科技碩博班
電子物理學系
Graduate Program of Nanotechnology , Department of Materials Science and Engineering
Department of Electrophysics
公開日期: 2005
摘要: In this paper, we describe the effects that five metallic contaminants have on the electrical property of an ultrathin gate oxide. We found that, among five metallic contaminants, Fe and Ni resulted in the lowest electric breakdown fields (E-bd) and charge-to-breakdown ratios (Q(bd)) and the highest leakage currents and interface state densities (D-it). On the other hand, Ca-contaminated devices exhibit a lower leakage current and D-it and a higher Q(bd) than did the other metals. (c) 2005 The Electrochemical Society.
URI: http://hdl.handle.net/11536/24392
http://dx.doi.org/10.1149/1.1945367
ISSN: 1099-0062
DOI: 10.1149/1.1945367
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 8
Issue: 8
起始頁: G201
結束頁: G203
Appears in Collections:Articles