完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Yang, Weihuang | en_US |
dc.contributor.author | Li, Jinchai | en_US |
dc.contributor.author | Zhang, Yong | en_US |
dc.contributor.author | Huang, Po-Kai | en_US |
dc.contributor.author | Lu, Tien-Chang | en_US |
dc.contributor.author | Kuo, Hao-Chung | en_US |
dc.contributor.author | Li, Shuping | en_US |
dc.contributor.author | Yang, Xu | en_US |
dc.contributor.author | Chen, Hangyang | en_US |
dc.contributor.author | Liu, Dayi | en_US |
dc.contributor.author | Kang, Junyong | en_US |
dc.date.accessioned | 2019-04-03T06:43:11Z | - |
dc.date.available | 2019-04-03T06:43:11Z | - |
dc.date.issued | 2014-06-05 | en_US |
dc.identifier.issn | 2045-2322 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1038/srep05166 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/24396 | - |
dc.description.abstract | High internal efficiency and high temperature stability ultraviolet (UV) light-emitting diodes (LEDs) at 308 nm were achieved using high density (2.5 x 10(9) cm(-2)) GaN/AlN quantum dots (QDs) grown by MOVPE. Photoluminescence shows the characteristic behaviors of QDs: nearly constant linewidth and emission energy, and linear dependence of the intensity with varying excitation power. More significantly, the radiative recombination was found to dominant from 15 to 300 K, with a high internal quantum efficiency of 62% even at room temperature. | en_US |
dc.language.iso | en_US | en_US |
dc.title | High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1038/srep05166 | en_US |
dc.identifier.journal | SCIENTIFIC REPORTS | en_US |
dc.citation.volume | 4 | en_US |
dc.citation.spage | 0 | en_US |
dc.citation.epage | 0 | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000336788400001 | en_US |
dc.citation.woscount | 18 | en_US |
顯示於類別: | 期刊論文 |