完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | CHOU, JW | en_US |
dc.contributor.author | CHANG, CY | en_US |
dc.contributor.author | HUANG, C | en_US |
dc.contributor.author | HO, LT | en_US |
dc.contributor.author | KO, J | en_US |
dc.contributor.author | HSUE, P | en_US |
dc.date.accessioned | 2014-12-08T15:03:55Z | - |
dc.date.available | 2014-12-08T15:03:55Z | - |
dc.date.issued | 1994-07-01 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.33.3864 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/2439 | - |
dc.description.abstract | A new surface counterdoped-lightly doped drain (SCD-LDD) structure with large angle tilt (LAT) implantation is proposed in this study. This structure introduces an additional larger tilt angle and lower-energy BF2 implant after the n- implant, which counterdopes the n- surface concentration to achieve a gate/n- fully overlapped, buried and sloped n- region inside the gate edge. As a result, the lateral electric fields inside the gate edge are reduced and pushed deeper into the substrate. In addition to a reduction in substrate current, this profile also suppresses hot carrier injection by driving the current away from the surface and the maximum electric field; then it shifts the avalanche region further into the bulk Si. This consequently produces a more effective enhancement of hot carrier reliability than that of conventional LDD's and controlled large-angle-tilt implanted drains (LATID's) for submicron VLSI circuits under 5 V operation. In conclusion, this SCD-LDD provides one more degree of freedom in optimizing the n- region doping profiles as a new LATID structure. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | VLSI | en_US |
dc.subject | HOT CARRIER EFFECT | en_US |
dc.subject | LIGHTLY DOPED DRAIN (LDD) | en_US |
dc.subject | DRAIN ENGINEERING | en_US |
dc.subject | OBLIQUE IMPLANTATION | en_US |
dc.subject | SURFACE COUNTERDOPED-LDD (SCD-LDD) | en_US |
dc.title | NEW LARGE-ANGLE TILT IMPLANTED DRAIN STRUCTURE - SURFACE COUNTER-DOPED-LIGHTLY DOPED DRAIN FOR HIGH HOT-CARRIER RELIABILITY | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1143/JJAP.33.3864 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | en_US |
dc.citation.volume | 33 | en_US |
dc.citation.issue | 7A | en_US |
dc.citation.spage | 3864 | en_US |
dc.citation.epage | 3872 | en_US |
dc.contributor.department | 電控工程研究所 | zh_TW |
dc.contributor.department | 奈米中心 | zh_TW |
dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
dc.contributor.department | Nano Facility Center | en_US |
dc.identifier.wosnumber | WOS:A1994PE44700011 | - |
dc.citation.woscount | 0 | - |
顯示於類別: | 期刊論文 |