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dc.contributor.authorCHOU, JWen_US
dc.contributor.authorCHANG, CYen_US
dc.contributor.authorHUANG, Cen_US
dc.contributor.authorHO, LTen_US
dc.contributor.authorKO, Jen_US
dc.contributor.authorHSUE, Pen_US
dc.date.accessioned2014-12-08T15:03:55Z-
dc.date.available2014-12-08T15:03:55Z-
dc.date.issued1994-07-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.33.3864en_US
dc.identifier.urihttp://hdl.handle.net/11536/2439-
dc.description.abstractA new surface counterdoped-lightly doped drain (SCD-LDD) structure with large angle tilt (LAT) implantation is proposed in this study. This structure introduces an additional larger tilt angle and lower-energy BF2 implant after the n- implant, which counterdopes the n- surface concentration to achieve a gate/n- fully overlapped, buried and sloped n- region inside the gate edge. As a result, the lateral electric fields inside the gate edge are reduced and pushed deeper into the substrate. In addition to a reduction in substrate current, this profile also suppresses hot carrier injection by driving the current away from the surface and the maximum electric field; then it shifts the avalanche region further into the bulk Si. This consequently produces a more effective enhancement of hot carrier reliability than that of conventional LDD's and controlled large-angle-tilt implanted drains (LATID's) for submicron VLSI circuits under 5 V operation. In conclusion, this SCD-LDD provides one more degree of freedom in optimizing the n- region doping profiles as a new LATID structure.en_US
dc.language.isoen_USen_US
dc.subjectVLSIen_US
dc.subjectHOT CARRIER EFFECTen_US
dc.subjectLIGHTLY DOPED DRAIN (LDD)en_US
dc.subjectDRAIN ENGINEERINGen_US
dc.subjectOBLIQUE IMPLANTATIONen_US
dc.subjectSURFACE COUNTERDOPED-LDD (SCD-LDD)en_US
dc.titleNEW LARGE-ANGLE TILT IMPLANTED DRAIN STRUCTURE - SURFACE COUNTER-DOPED-LIGHTLY DOPED DRAIN FOR HIGH HOT-CARRIER RELIABILITYen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.33.3864en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume33en_US
dc.citation.issue7Aen_US
dc.citation.spage3864en_US
dc.citation.epage3872en_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.department奈米中心zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.contributor.departmentNano Facility Centeren_US
dc.identifier.wosnumberWOS:A1994PE44700011-
dc.citation.woscount0-
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