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dc.contributor.authorHWANG, STen_US
dc.contributor.authorHUANG, JKen_US
dc.contributor.authorHUANG, YSen_US
dc.date.accessioned2014-12-08T15:03:55Z-
dc.date.available2014-12-08T15:03:55Z-
dc.date.issued1994-07-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.33.3962en_US
dc.identifier.urihttp://hdl.handle.net/11536/2440-
dc.description.abstractRaman scattering of single-crystal RuTe2 has been carried out with good frequency resolution and wide wavelength coverage. In this article, our results are presented and compared with those for other ruthenium dichalcogenides (RuSe2, and RuS2) reported previously. We found a good linear relationship between all Raman shifts and the reciprocal chalcogen mass. We also observed resonant scattering related to inter-electronic-band transitions.en_US
dc.language.isoen_USen_US
dc.subjectRAMAN SCATTERINGen_US
dc.subjectRUTHENIUM DICHALCOGENIDESen_US
dc.subjectRESONANT SCATTERINGen_US
dc.titleRAMAN CHARACTERIZATIONS OF RUTHENIUM DICHALCOGENIDESen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.33.3962en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume33en_US
dc.citation.issue7Aen_US
dc.citation.spage3962en_US
dc.citation.epage3964en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:A1994PE44700031-
dc.citation.woscount0-
Appears in Collections:Articles


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