RAMAN CHARACTERIZATIONS OF RUTHENIUM DICHALCOGENIDES

doi:10.1143/JJAP.33.3962

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	HWANG, ST	en_US
dc.contributor.author	HUANG, JK	en_US
dc.contributor.author	HUANG, YS	en_US
dc.date.accessioned	2014-12-08T15:03:55Z	-
dc.date.available	2014-12-08T15:03:55Z	-
dc.date.issued	1994-07-01	en_US
dc.identifier.issn	0021-4922	en_US
dc.identifier.uri	http://dx.doi.org/10.1143/JJAP.33.3962	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2440	-
dc.description.abstract	Raman scattering of single-crystal RuTe2 has been carried out with good frequency resolution and wide wavelength coverage. In this article, our results are presented and compared with those for other ruthenium dichalcogenides (RuSe2, and RuS2) reported previously. We found a good linear relationship between all Raman shifts and the reciprocal chalcogen mass. We also observed resonant scattering related to inter-electronic-band transitions.	en_US
dc.language.iso	en_US	en_US
dc.subject	RAMAN SCATTERING	en_US
dc.subject	RUTHENIUM DICHALCOGENIDES	en_US
dc.subject	RESONANT SCATTERING	en_US
dc.title	RAMAN CHARACTERIZATIONS OF RUTHENIUM DICHALCOGENIDES	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1143/JJAP.33.3962	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS	en_US
dc.citation.volume	33	en_US
dc.citation.issue	7A	en_US
dc.citation.spage	3962	en_US
dc.citation.epage	3964	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:A1994PE44700031	-
dc.citation.woscount	0	-
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