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dc.contributor.authorHUANG, CSen_US
dc.contributor.authorLIN, INen_US
dc.contributor.authorLEE, JYMen_US
dc.contributor.authorTSENG, TYen_US
dc.date.accessioned2014-12-08T15:03:55Z-
dc.date.available2014-12-08T15:03:55Z-
dc.date.issued1994-07-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.33.4058en_US
dc.identifier.urihttp://hdl.handle.net/11536/2442-
dc.description.abstractThe growth behavior of Y1Ba2Cu3O7-x (YBCO) thin films on MgO substrates synthesized by laser ablation deposition techniques has been investigated. The effects of important parameters, i.e., substrate temperature, post annealing schemes, laser beam fluence and deposition chamber atmosphere on the crystal structure, microstructure and superconductivity of the deposited films have been studied. Among those important depositing parameters, the plume to film interaction was observed to impose the most prominent effect on the film characteristics. The films were found to consist mainly of a noncrystalline phase whenever the substrates were located either in the invisible or the supersonic zones of the plume. Only when the substrates are positioned in the reactive zone does the crystalline phase grow rapidly via a nucleation and growth mechanism. The (013) grains nucleate preferentially and are subsequently transformed into a (00m) orientation, possibly by diffusion. The number of (013) grains transformed increases with temperature used for step annealing and with time at that temperature.en_US
dc.language.isoen_USen_US
dc.subjectSUPERCONDUCTORen_US
dc.subjectLASER ABLATIONen_US
dc.subjectYBA2CU3O7-X AND PLUMEen_US
dc.titleGROWTH-BEHAVIOR OF Y1BA2CU3O7-X SUPERCONDUCTING THIN-FILMS USING LASER-ABLATION TECHNIQUEen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.33.4058en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume33en_US
dc.citation.issue7Aen_US
dc.citation.spage4058en_US
dc.citation.epage4065en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1994PE44700048-
dc.citation.woscount8-
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