Chirped-pulse manipulated carrier dynamics in low-temperature molecular-beam-epitaxy grown GaAs

doi:10.1063/1.4875027

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DC Field	Value	Language
dc.contributor.author	Lee, Chao-Kuei	en_US
dc.contributor.author	Lin, Yuan-Yao	en_US
dc.contributor.author	Lin, Sung-Hui	en_US
dc.contributor.author	Lin, Gong-Ru	en_US
dc.contributor.author	Pan, Ci-Ling	en_US
dc.date.accessioned	2014-12-08T15:36:08Z	-
dc.date.available	2014-12-08T15:36:08Z	-
dc.date.issued	2014-04-28	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.4875027	en_US
dc.identifier.uri	http://hdl.handle.net/11536/24472	-
dc.description.abstract	Chirped pulse controlled carrier dynamics in low-temperature molecular-beam-epitaxy grown GaAs are investigated by degenerate pump-probe technique. Varying the chirped condition of excited pulse from negative to positive increases the carrier relaxation time so as to modify the dispersion and reshape current pulse in time domain. The spectral dependence of carrier dynamics is analytically derived and explained by Shockley-Read Hall model. This observation enables the new feasibility of controlling carrier dynamics in ultrafast optical devices via the chirped pulse excitations. (C) 2014 AIP Publishing LLC.	en_US
dc.language.iso	en_US	en_US
dc.title	Chirped-pulse manipulated carrier dynamics in low-temperature molecular-beam-epitaxy grown GaAs	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.4875027	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	104	en_US
dc.citation.issue	17	en_US
dc.citation.epage		en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000336142500037	-
dc.citation.woscount	0	-
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