Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | CHENG, TM | en_US |
dc.contributor.author | CHANG, CY | en_US |
dc.contributor.author | CHANG, TC | en_US |
dc.contributor.author | HUANG, JH | en_US |
dc.contributor.author | HUANG, MF | en_US |
dc.date.accessioned | 2014-12-08T15:03:55Z | - |
dc.date.available | 2014-12-08T15:03:55Z | - |
dc.date.issued | 1994-06-27 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.111225 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/2448 | - |
dc.description.abstract | High-resolution x-ray analysis of Si delta-doped GaAs grown by molecular-beam epitaxy at a low substrate temperature (230-degrees-C) is presented. Superlattice satellite peaks in the rocking curve are observed for the sample annealed at 700-degrees-C for 10 min. The peak intensity increases with increasing postgrowth annealing temperature and reaches the maximum value for the 900-degrees-C annealed sample. The evolution of the x-ray rocking curves can be explained consistently by the formation of a GaAs/As superlattice during the annealing period based on the transmission electron microscope observations. | en_US |
dc.language.iso | en_US | en_US |
dc.title | HIGH-RESOLUTION X-RAY CHARACTERIZATION OF LOW-TEMPERATURE GAAS/AS SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.111225 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 64 | en_US |
dc.citation.issue | 26 | en_US |
dc.citation.spage | 3626 | en_US |
dc.citation.epage | 3628 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電控工程研究所 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
dc.identifier.wosnumber | WOS:A1994NU15500035 | - |
dc.citation.woscount | 3 | - |
Appears in Collections: | Articles |