HIGH-RESOLUTION X-RAY CHARACTERIZATION OF LOW-TEMPERATURE GAAS/AS SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY

doi:10.1063/1.111225

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	CHENG, TM	en_US
dc.contributor.author	CHANG, CY	en_US
dc.contributor.author	CHANG, TC	en_US
dc.contributor.author	HUANG, JH	en_US
dc.contributor.author	HUANG, MF	en_US
dc.date.accessioned	2014-12-08T15:03:55Z	-
dc.date.available	2014-12-08T15:03:55Z	-
dc.date.issued	1994-06-27	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.111225	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2448	-
dc.description.abstract	High-resolution x-ray analysis of Si delta-doped GaAs grown by molecular-beam epitaxy at a low substrate temperature (230-degrees-C) is presented. Superlattice satellite peaks in the rocking curve are observed for the sample annealed at 700-degrees-C for 10 min. The peak intensity increases with increasing postgrowth annealing temperature and reaches the maximum value for the 900-degrees-C annealed sample. The evolution of the x-ray rocking curves can be explained consistently by the formation of a GaAs/As superlattice during the annealing period based on the transmission electron microscope observations.	en_US
dc.language.iso	en_US	en_US
dc.title	HIGH-RESOLUTION X-RAY CHARACTERIZATION OF LOW-TEMPERATURE GAAS/AS SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.111225	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	64	en_US
dc.citation.issue	26	en_US
dc.citation.spage	3626	en_US
dc.citation.epage	3628	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1994NU15500035	-
dc.citation.woscount	3	-
顯示於類別：	期刊論文