HIGH-RESOLUTION X-RAY CHARACTERIZATION OF LOW-TEMPERATURE GAAS/AS SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY

Abstract

High-resolution x-ray analysis of Si delta-doped GaAs grown by molecular-beam epitaxy at a low substrate temperature (230-degrees-C) is presented. Superlattice satellite peaks in the rocking curve are observed for the sample annealed at 700-degrees-C for 10 min. The peak intensity increases with increasing postgrowth annealing temperature and reaches the maximum value for the 900-degrees-C annealed sample. The evolution of the x-ray rocking curves can be explained consistently by the formation of a GaAs/As superlattice during the annealing period based on the transmission electron microscope observations.