Fabrication and characterization of spherical polycrystalline diamond emitter arrays

doi:10.1016/S0040-6090(97)00671-8

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chen, CF	en_US
dc.contributor.author	Huang, WH	en_US
dc.date.accessioned	2014-12-08T15:01:23Z	-
dc.date.available	2014-12-08T15:01:23Z	-
dc.date.issued	1997-10-31	en_US
dc.identifier.issn	0040-6090	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/S0040-6090(97)00671-8	en_US
dc.identifier.uri	http://hdl.handle.net/11536/244	-
dc.description.abstract	In this work, a high density of spherical polycrystalline diamond field emitter arrays (SPD-FEAs) were fabricated, using microwave plasma chemical vapor deposition (MPCVD) method. Results obtained from the current-voltage (I-e-V-a) characteristics indicate that the impurities heavily influence electron emission. In addition, the emissions current of the phosphorus-doped SDP-FEAs appears to be 25 times lar er than the boron-doped and 120 times larger than the undoped SPD-FEAs. (C) 1997 Elsevier Science S.A.	en_US
dc.language.iso	en_US	en_US
dc.subject	diamond	en_US
dc.subject	field emitter array	en_US
dc.subject	emission current	en_US
dc.subject	microwave plasma chemical vapor deposition	en_US
dc.title	Fabrication and characterization of spherical polycrystalline diamond emitter arrays	en_US
dc.type	Article; Proceedings Paper	en_US
dc.identifier.doi	10.1016/S0040-6090(97)00671-8	en_US
dc.identifier.journal	THIN SOLID FILMS	en_US
dc.citation.volume	308	en_US
dc.citation.issue		en_US
dc.citation.spage	85	en_US
dc.citation.epage	89	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000071553400016	-
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