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dc.contributor.authorYen, Tzu-Chunen_US
dc.contributor.authorWang, Wei-Linen_US
dc.contributor.authorPeng, Chun-Yenen_US
dc.contributor.authorTian, Jr-Shengen_US
dc.contributor.authorHo, Yen-Tengen_US
dc.contributor.authorChang, Lien_US
dc.date.accessioned2014-12-08T15:36:09Z-
dc.date.available2014-12-08T15:36:09Z-
dc.date.issued2014-03-01en_US
dc.identifier.issn0734-2101en_US
dc.identifier.urihttp://dx.doi.org/10.1116/1.4830275en_US
dc.identifier.urihttp://hdl.handle.net/11536/24501-
dc.description.abstractThe defects in (13 (4) over bar0)ZnO epitaxial film grown on (114)LaAlO3 (LAO) have been systematically investigated by using transmission electron microscopy. At the ZnO/LAO interface, the Burgers vectors of misfit dislocations are identified to be 1/3[(1) over bar2 (1) over bar0] and 1/2[0001]. Threading dislocations with the Burgers vectors of 1/3 < 11 (2) over bar0 > and < 0001 > are distributed on the basal plane. In (13 (4) over bar0)ZnO film, the predominant planar defects are basal stacking faults (BSFs) with 1/6 < 20 (2) over bar3 > displacement vectors. The densities of dislocations and BSFs are about 3.8 x 10(10) cm(-2) and 3.1 x 10(5) cm(-1), respectively. (C) 2014 American Vacuum Society.en_US
dc.language.isoen_USen_US
dc.titleDefects in nonpolar (13(4)over-bar0) ZnO epitaxial film grown on (114) LaAlO3 substrateen_US
dc.typeArticleen_US
dc.identifier.doi10.1116/1.4830275en_US
dc.identifier.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY Aen_US
dc.citation.volume32en_US
dc.citation.issue2en_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000335964200003-
dc.citation.woscount0-
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