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dc.contributor.authorChen, Yi-Chunen_US
dc.contributor.authorChang, Lien_US
dc.date.accessioned2014-12-08T15:36:10Z-
dc.date.available2014-12-08T15:36:10Z-
dc.date.issued2014en_US
dc.identifier.issn2046-2069en_US
dc.identifier.urihttp://hdl.handle.net/11536/24530-
dc.identifier.urihttp://dx.doi.org/10.1039/c4ra01042fen_US
dc.description.abstractContinuous diamond thin films can be grown on sapphire substrates by microwave plasma chemical vapor deposition utilizing a pretreatment of adamantane dip coating on the substrate for enhanced nucleation. Scanning electron microscopy, X-ray diffraction and Raman spectroscopy show that < 111 > oriented diamond films of good crystallinity can be deposited on adamantane-coated sapphire substrates. Cross-sectional transmission electron microscopy at the diamond/sapphire interface shows that diamond can be directly synthesized on sapphire without any interlayer.en_US
dc.language.isoen_USen_US
dc.titleChemical vapor deposition of diamond on an adamantane-coated sapphire substrateen_US
dc.typeArticleen_US
dc.identifier.doi10.1039/c4ra01042fen_US
dc.identifier.journalRSC ADVANCESen_US
dc.citation.volume4en_US
dc.citation.issue36en_US
dc.citation.spage18945en_US
dc.citation.epage18950en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000335556800058-
dc.citation.woscount1-
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