完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, Yi-Chun | en_US |
dc.contributor.author | Chang, Li | en_US |
dc.date.accessioned | 2014-12-08T15:36:10Z | - |
dc.date.available | 2014-12-08T15:36:10Z | - |
dc.date.issued | 2014 | en_US |
dc.identifier.issn | 2046-2069 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/24530 | - |
dc.identifier.uri | http://dx.doi.org/10.1039/c4ra01042f | en_US |
dc.description.abstract | Continuous diamond thin films can be grown on sapphire substrates by microwave plasma chemical vapor deposition utilizing a pretreatment of adamantane dip coating on the substrate for enhanced nucleation. Scanning electron microscopy, X-ray diffraction and Raman spectroscopy show that < 111 > oriented diamond films of good crystallinity can be deposited on adamantane-coated sapphire substrates. Cross-sectional transmission electron microscopy at the diamond/sapphire interface shows that diamond can be directly synthesized on sapphire without any interlayer. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Chemical vapor deposition of diamond on an adamantane-coated sapphire substrate | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1039/c4ra01042f | en_US |
dc.identifier.journal | RSC ADVANCES | en_US |
dc.citation.volume | 4 | en_US |
dc.citation.issue | 36 | en_US |
dc.citation.spage | 18945 | en_US |
dc.citation.epage | 18950 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000335556800058 | - |
dc.citation.woscount | 1 | - |
顯示於類別: | 期刊論文 |