標題: Carrier dynamics in dilute II-VI oxide highly mismatched alloys
作者: Lin, Yan-Cheng
Chou, Wu-Ching
Chyi, Jen-Inn
Tanaka, Tooru
電子物理學系
Department of Electrophysics
關鍵字: II-VI oxides;highly mismatched alloys;time-resolved photoluminescence;carrier dynamics;ZnSeO;ZnTeO;intermediate band
公開日期: 2014
摘要: This study explores comprehensively the carrier dynamics in ZnSeO and ZnTeO using photoluminescence (PL) and time-resolved PL spectroscopy. As the O concentration increases, the PL emissions shift toward lower energies. Additionally, the PL lifetime increases with increasing O contents and the decay curves exhibit complex behavior. In the case of ZnSeO, the mechanism of carrier recombination undergoes a complicated change from trapped to free excitons with the increase in temperature. The incorporation of O in ZnTe generates a wide distribution of electron localization below the energy of the E- conduction subband, and these cause broad PL emission and serve as another intermediate band. Electrons in both the E+ and the E- conduction subbands favor rapid relaxation to low energy states. Moreover, temperature-independent long carrier lifetimes (> 130.0 ns) that are induced by localized electrons increase with O concentration.
URI: http://hdl.handle.net/11536/24552
http://dx.doi.org/10.1117/12.2039837
ISBN: 978-0-8194-9900-4
ISSN: 0277-786X
DOI: 10.1117/12.2039837
期刊: OXIDE-BASED MATERIALS AND DEVICES V
Volume: 8987
Appears in Collections:Conferences Paper


Files in This Item:

  1. 000337582100008.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.