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dc.contributor.authorBinh-Tinh Tranen_US
dc.contributor.authorChang, Edward Yien_US
dc.contributor.authorLin, Kung-Liangen_US
dc.contributor.authorLuong, Tien-Tungen_US
dc.contributor.authorYu, Hung-Weien_US
dc.contributor.authorHuang, Man-Chien_US
dc.contributor.authorChung, Chen-Chenen_US
dc.contributor.authorHai-Dang Trinhen_US
dc.contributor.authorHong-Quan Nguyenen_US
dc.contributor.authorChi-Lang Nguyenen_US
dc.contributor.authorQuang-Ho Lucen_US
dc.date.accessioned2014-12-08T15:36:13Z-
dc.date.available2014-12-08T15:36:13Z-
dc.date.issued2012en_US
dc.identifier.isbn978-1-60768-351-3en_US
dc.identifier.issn1938-5862en_US
dc.identifier.urihttp://hdl.handle.net/11536/24563-
dc.identifier.urihttp://dx.doi.org/10.1149/05003.0461ecsten_US
dc.description.abstractWe present the effect of multiple AlN buffer layers on characterizations of GaN film quality, which includes a thin high-low-high-temperature (HLHT) AlN buffer layers. The study is based on two different thicknesses of the GaN films on the buffers and found that the HLHT AlN buffer layers could significantly affect on the GaN films qualities. The buffer plays a very important role for the growth of GaN film on Si (111) substrate. The GaN film with an uniformly faceted surface and very high-quality has been obtained at the optimized multiple HLHT AlN buffer layers of 50-nm-thick at 1010-800-1010 degrees C.en_US
dc.language.isoen_USen_US
dc.titleCharacterizations of GaN Films Grown on Si (111) Substrates with Various Growth Temperatures of Multiple AlN Buffer Layersen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1149/05003.0461ecsten_US
dc.identifier.journalGALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 2en_US
dc.citation.volume50en_US
dc.citation.issue3en_US
dc.citation.spage461en_US
dc.citation.epage467en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000337755900050-
Appears in Collections:Conferences Paper