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dc.contributor.authorWU, WFen_US
dc.contributor.authorCHIOU, BSen_US
dc.contributor.authorHSIEH, STen_US
dc.date.accessioned2014-12-08T15:03:56Z-
dc.date.available2014-12-08T15:03:56Z-
dc.date.issued1994-06-01en_US
dc.identifier.issn0268-1242en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0268-1242/9/6/014en_US
dc.identifier.urihttp://hdl.handle.net/11536/2458-
dc.description.abstractThe structural and optical properties of RF magnetron sputtered ITO films without in situ substrate heating and post-deposition annealing are investigated. The structure and orientation of ITO films strongly depends on the energy of the sputtered particles arriving at the substrate. As the sputtering power increases from 15 to 100 W, the preferred orientation of the ITC) film changes from (222) to (400). It is observed that the lattice constant of the film increases initially as sputtering power increases from 15 to 50 W and then decreases with further increase of sputtering power. The higher the sputtering power, the smaller the oxygen content of the film. The oxygen deficiency is used to explain the loss of transmittance or blackening of ITO films deposited at high sputtering power. Several material parameters, such as optical constants and energy gap, have been derived and discussed. The figure of merit of the films ranges from 81.3 to 117.6 OMEGA-1.en_US
dc.language.isoen_USen_US
dc.titleEFFECT OF SPUTTERING POWER ON THE STRUCTURAL AND OPTICAL-PROPERTIES OF RF MAGNETRON-SPUTTERED ITO FILMSen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0268-1242/9/6/014en_US
dc.identifier.journalSEMICONDUCTOR SCIENCE AND TECHNOLOGYen_US
dc.citation.volume9en_US
dc.citation.issue6en_US
dc.citation.spage1242en_US
dc.citation.epage1249en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1994NQ79100014-
dc.citation.woscount73-
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