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dc.contributor.authorLiou, JWen_US
dc.contributor.authorChiou, BSen_US
dc.date.accessioned2014-12-08T15:01:23Z-
dc.date.available2014-12-08T15:01:23Z-
dc.date.issued1997-10-30en_US
dc.identifier.issn0254-0584en_US
dc.identifier.urihttp://hdl.handle.net/11536/245-
dc.description.abstractBa1-xSrxTiO3 (x=0 to 1) ferroelectric ceramics doped with 1.0 mol.% MgO and 0.05 mol.% MnO2 were prepared with a rate-controlled sintering profile. The lattice constant of this BST system decreases as the strontium molar fraction increases. This is due to the smaller Sr2+ ionic radius than that of Ba2+. The temperature dependence of the dielectric constant is measured at 10 kHz. A linear relation of the Curie temperature of the BST system to the Sr fraction for x less than or equal to 0.75 is observed. When this reaction is fitted to a modified Curie-Weiss law, two parameters, the critical exponent and the diffuseness parameter, which represent the order of transition broadening, can be calculated. From the values of these two parameters, it is suggested that the physical meanings of these two parameters are correlated to each other. The transition broadening is greatest for x = 0.5 owing to the most composition fluctuation. Dipole relaxation of the composition with x = 0.25 is observed at frequencies above 1 MHz. On the basis of Cole-Cole analysis, a low frequency relaxation due to dopants Mn4+ at below 50 kHz is observed. (C) 1997 Elsevier Science S.A.en_US
dc.language.isoen_USen_US
dc.subjectdielectric characteristicsen_US
dc.subjectferroelectric materialen_US
dc.subjectparaelectric stateen_US
dc.subjectCurie-Weiss lawen_US
dc.subjecttransition broadeningen_US
dc.titleDielectric characteristics of doped Ba1-xSrxTiO3 at the paraelectric stateen_US
dc.typeArticleen_US
dc.identifier.journalMATERIALS CHEMISTRY AND PHYSICSen_US
dc.citation.volume51en_US
dc.citation.issue1en_US
dc.citation.spage59en_US
dc.citation.epage63en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1997YB63700011-
dc.citation.woscount45-
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