完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chang, Li-Chuan | en_US |
dc.contributor.author | Chen, Yu-An | en_US |
dc.contributor.author | Kuo, Cheng-Huang | en_US |
dc.date.accessioned | 2014-12-08T15:36:17Z | - |
dc.date.available | 2014-12-08T15:36:17Z | - |
dc.date.issued | 2014-07-01 | en_US |
dc.identifier.issn | 0018-9383 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/TED.2014.2325411 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/24623 | - |
dc.description.abstract | In this paper, we investigate sputtered physical vapor deposition (PVD) AlN nucleation layer effects on crystal quality and efficiency of GaN-based light-emitting diodes (LEDs) prepared on high-aspect ratio patterned sapphire substrate (HARPSS). The crystal quality of the GaN epitaxial layer prepared on HARPSS with a PVD AlN nucleation layer was significantly better than that with a conventional metal organic chemical vapor deposition (MOCVD)-grown AlN nucleation layer. In addition, the pure wurzite structure GaN prepared on HARPSS could be obtained using PVD AlN nucleation layer. With the PVD AlN nucleation layer, the 20-mA LED light output power of the LEDs can be enhanced by 47.7% compared with the LEDs with the conventional MOCVD-grown AlN nucleation layer. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | AlN | en_US |
dc.subject | GaN | en_US |
dc.subject | light-emitting diodes (LEDs) | en_US |
dc.subject | nucleation | en_US |
dc.subject | patterned sapphire substrate (PSS) | en_US |
dc.subject | physical vapor deposition (PVD) | en_US |
dc.title | Spatial Correlation Between Efficiency and Crystal Structure in GaN-Based Light-Emitting Diodes Prepared on High-Aspect Ratio Patterned Sapphire Substrate With Sputtered AlN Nucleation Layer | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/TED.2014.2325411 | en_US |
dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
dc.citation.volume | 61 | en_US |
dc.citation.issue | 7 | en_US |
dc.citation.spage | 2443 | en_US |
dc.citation.epage | 2447 | en_US |
dc.contributor.department | 照明與能源光電研究所 | zh_TW |
dc.contributor.department | Institute of Lighting and Energy Photonics | en_US |
dc.identifier.wosnumber | WOS:000338027200031 | - |
dc.citation.woscount | 0 | - |
顯示於類別: | 期刊論文 |