完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lo, Shun-Tsung | en_US |
dc.contributor.author | Lin, Shih-Wei | en_US |
dc.contributor.author | Wang, Yi-Ting | en_US |
dc.contributor.author | Lin, Sheng-Di | en_US |
dc.contributor.author | Liang, C. -T. | en_US |
dc.date.accessioned | 2019-04-03T06:43:10Z | - |
dc.date.available | 2019-04-03T06:43:10Z | - |
dc.date.issued | 2014-06-25 | en_US |
dc.identifier.issn | 2045-2322 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1038/srep05438 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/24636 | - |
dc.description.abstract | Superconductivity and spin-orbit (SO) interaction have been two separate emerging fields until very recently that the correlation between them seemed to be observed. However, previous experiments concerning SO coupling are performed far beyond the superconducting state and thus a direct demonstration of how SO coupling affects superconductivity remains elusive. Here we investigate the SO coupling in the critical region of superconducting transition on Al nanofilms, in which the strength of disorder and spin relaxation by SO coupling are changed by varying the film thickness. At temperatures T sufficiently above the superconducting critical temperature T-c, clear signature of SO coupling reveals itself in showing a magneto-resistivity peak. When T < T-c, the resistivity peak can still be observed; however, its line-shape is now affected by the onset of the quasi two-dimensional superconductivity. By studying such magneto-resistivity peaks under different strength of spin relaxation, we highlight the important effects of SO interaction on superconductivity. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Spin-orbit-coupled superconductivity | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1038/srep05438 | en_US |
dc.identifier.journal | SCIENTIFIC REPORTS | en_US |
dc.citation.volume | 4 | en_US |
dc.citation.spage | 0 | en_US |
dc.citation.epage | 0 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000337890600012 | en_US |
dc.citation.woscount | 8 | en_US |
顯示於類別: | 期刊論文 |