Performance comparison of titanium-oxide resistive switching memories using GeOx and AlOx capping layers for flexible application

doi:10.7567/JJAP.53.061502

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DC Field	Value	Language
dc.contributor.author	Chou, Kun-I	en_US
dc.contributor.author	Cheng, Chun-Hu	en_US
dc.contributor.author	Chin, Albert	en_US
dc.date.accessioned	2014-12-08T15:36:20Z	-
dc.date.available	2014-12-08T15:36:20Z	-
dc.date.issued	2014-06-01	en_US
dc.identifier.issn	0021-4922	en_US
dc.identifier.uri	http://dx.doi.org/10.7567/JJAP.53.061502	en_US
dc.identifier.uri	http://hdl.handle.net/11536/24665	-
dc.description.abstract	To meet the requirements of flexible memory applications, we have compared two capping layers of GeOx and AlOx on a TiOy resistive random access memory (RRAM) at room temperature. A Ni/GeOx/TiOy/TaN RRAM shows a large resistance window of >10(2), 85 degrees C retention, a high-resistance-state (HRS) activation energy (E-a) of 0.52 eV, and a good DC cycling of 10(3) cycles, which are significantly better than those of a Ni/AlOx/TiOy/TaN RRAM, which has a high-defect-density dielectric of AlOx. (C) 2014 The Japan Society of Applied Physics	en_US
dc.language.iso	en_US	en_US
dc.title	Performance comparison of titanium-oxide resistive switching memories using GeOx and AlOx capping layers for flexible application	en_US
dc.type	Article	en_US
dc.identifier.doi	10.7567/JJAP.53.061502	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS	en_US
dc.citation.volume	53	en_US
dc.citation.issue	6	en_US
dc.citation.epage		en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000338104600015	-
dc.citation.woscount	0	-
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