完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Juan, CP | en_US |
dc.contributor.author | Chen, KJ | en_US |
dc.contributor.author | Tsai, CC | en_US |
dc.contributor.author | Lin, KC | en_US |
dc.contributor.author | Hong, WK | en_US |
dc.contributor.author | Hsieh, CY | en_US |
dc.contributor.author | Wang, WP | en_US |
dc.contributor.author | Lai, RL | en_US |
dc.contributor.author | Chen, KH | en_US |
dc.contributor.author | Chen, LC | en_US |
dc.contributor.author | Cheng, HC | en_US |
dc.date.accessioned | 2014-12-08T15:36:20Z | - |
dc.date.available | 2014-12-08T15:36:20Z | - |
dc.date.issued | 2005-01-01 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.44.365 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/24680 | - |
dc.description.abstract | The density distribution of CNTs is one of the. crucial parameters determing the field-emission property of CNTs. To effectively control the density of CNTs, an inactive thin-film layer was deposited on a catalyst. The results showed that improved field emission property could be obtained with a thin SiO layer on the catalyst layer as the precursor. For 3.5 nm Fe and 3.5 nm SiO on 3.5 nm Fe as a catalyst, the turn-on field could be decreased from 3.7 V/mum. to 2.2 V/mum and the field-emission current density increased from 2.6 x 10(-8) A/cm(2) to 2.4 x 10(-4) A/cm(2) when the applied field was 4 V/mum. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | carbon nanotubes | en_US |
dc.subject | inactive thin-film layer | en_US |
dc.subject | density control of CNTs | en_US |
dc.title | Improved field-emission properties of carbon nanotube field-emission arrays by controlled density growth,of carbon nanotubes | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1143/JJAP.44.365 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | en_US |
dc.citation.volume | 44 | en_US |
dc.citation.issue | 1A | en_US |
dc.citation.spage | 365 | en_US |
dc.citation.epage | 370 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000226996600075 | - |
dc.citation.woscount | 4 | - |
顯示於類別: | 期刊論文 |