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dc.contributor.authorJuan, CPen_US
dc.contributor.authorChen, KJen_US
dc.contributor.authorTsai, CCen_US
dc.contributor.authorLin, KCen_US
dc.contributor.authorHong, WKen_US
dc.contributor.authorHsieh, CYen_US
dc.contributor.authorWang, WPen_US
dc.contributor.authorLai, RLen_US
dc.contributor.authorChen, KHen_US
dc.contributor.authorChen, LCen_US
dc.contributor.authorCheng, HCen_US
dc.date.accessioned2014-12-08T15:36:20Z-
dc.date.available2014-12-08T15:36:20Z-
dc.date.issued2005-01-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.44.365en_US
dc.identifier.urihttp://hdl.handle.net/11536/24680-
dc.description.abstractThe density distribution of CNTs is one of the. crucial parameters determing the field-emission property of CNTs. To effectively control the density of CNTs, an inactive thin-film layer was deposited on a catalyst. The results showed that improved field emission property could be obtained with a thin SiO layer on the catalyst layer as the precursor. For 3.5 nm Fe and 3.5 nm SiO on 3.5 nm Fe as a catalyst, the turn-on field could be decreased from 3.7 V/mum. to 2.2 V/mum and the field-emission current density increased from 2.6 x 10(-8) A/cm(2) to 2.4 x 10(-4) A/cm(2) when the applied field was 4 V/mum.en_US
dc.language.isoen_USen_US
dc.subjectcarbon nanotubesen_US
dc.subjectinactive thin-film layeren_US
dc.subjectdensity control of CNTsen_US
dc.titleImproved field-emission properties of carbon nanotube field-emission arrays by controlled density growth,of carbon nanotubesen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.44.365en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERSen_US
dc.citation.volume44en_US
dc.citation.issue1Aen_US
dc.citation.spage365en_US
dc.citation.epage370en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000226996600075-
dc.citation.woscount4-
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