標題: | Gold-free fully cu-metallized InGaP/GaAs heterojunction bipolar transistor |
作者: | Chang, SW Chang, EY Biswas, D Lee, CS Chen, KS Tseng, CW Hsieh, TL Wu, WC 材料科學與工程學系 Department of Materials Science and Engineering |
關鍵字: | copper;GaAs;HBT;metallization;diffusion barrier |
公開日期: | 1-一月-2005 |
摘要: | A gold-free, fully Cu-metallized InGaP/GaAs heterejunction bipolar transistor using platinum as the diffusion barrier has been successfully fabricated. The HBT uses Pd/Ge and Pt/Ti/Pt/Cu for n-type and p(+)-type ohmic contacts, respectively, and Ti/Pt/Cu for interconnect metals with platinum as the diffusion barrier. The Ti/Pt/Cu structure was stable during annealing up to 350degreesC judging from the X-ray diffraction (XRD) data and sheet resistance. A current-accelerated stress test was conducted on the device with a current density J(C) = 140 kA/cm(2) for 24 h, and the current gain showed no degradation. The devices were also thermally annealed at 250degreesC,for 24 h and showed little change. We have successfully demonstrated that an Au-free, fully Cu-metallized HBT can be realized using Pt as the diffusion barrier and Pd/Ge and Pt/Ti/Pt/Cu as the ohmic contacts. |
URI: | http://dx.doi.org/10.1143/JJAP.44.8 http://hdl.handle.net/11536/24691 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.44.8 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS |
Volume: | 44 |
Issue: | 1A |
起始頁: | 8 |
結束頁: | 11 |
顯示於類別: | 期刊論文 |