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dc.contributor.authorLin, Chen-Weien_US
dc.contributor.authorChao, Mango C. -T.en_US
dc.contributor.authorHsu, Chih-Chiehen_US
dc.date.accessioned2014-12-08T15:36:21Z-
dc.date.available2014-12-08T15:36:21Z-
dc.date.issued2014-06-01en_US
dc.identifier.issn1063-8210en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TVLSI.2013.2268984en_US
dc.identifier.urihttp://hdl.handle.net/11536/24692-
dc.description.abstractGate oxide short (GOS) has become a common defect for advanced technologies as the gate oxide thickness of a MOSFET is greatly reduced. The behavior of a GOS-impacted MOSFET is, however, complicated and difficult to be accurately modeled at the circuit level. In this paper, we first build a golden model of a GOS-impacted MOSFET by using technology CAD, and identify the limitation and inaccuracy of the previous GOS models. Next, we propose a novel circuit-level GOS model which provides a higher accuracy of its dc characteristics than any of the previous models and being is able to represent a minimum-size GOS-impacted MOSFET. In addition, the proposed model can fit the transient characteristics of a GOS by considering the capacitance change of the GOS-impacted MOSFET, which has not been discussed in previous work. Last, we utilize our proposed GOS model to develop a novel GOS test method for SRAMs, which can effectively detect the GOS defects usually escaped from the conventional IDDQ test and March test.en_US
dc.language.isoen_USen_US
dc.subjectDefect modelingen_US
dc.subjectgate-oxide shorten_US
dc.subjectSRAMen_US
dc.subjecttestingen_US
dc.titleNovel Circuit-Level Model for Gate Oxide Short and its Testing Method in SRAMsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TVLSI.2013.2268984en_US
dc.identifier.journalIEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMSen_US
dc.citation.volume22en_US
dc.citation.issue6en_US
dc.citation.spage1294en_US
dc.citation.epage1307en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000337167600009-
dc.citation.woscount0-
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