标题: Highly Transparent, High-Performance IGZO-TFTs Using the Selective Formation of IGZO Source and Drain Electrodes
作者: Wu, Hung-Chi
Chien, Chao-Hsin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
关键字: RTA;self-aligned;IGZO;TFT
公开日期: 1-六月-2014
摘要: In this letter, high-performance, highly transparent amorphous InGaZnO (IGZO) thin-film transistors (TFTs) with IGZO source/drain electrodes were fabricated. Rapid thermal annealing treatment effectively converted IGZO from a semiconductor into a conductor. Using a patterned SiO2 capping layer, highly transparent IGZO-TFTs with selectively formed IGZO electrodes were fabricated on a glass substrate. The mobility of the fabricated IGZO-TFT was 8.3 cm(2)/V s, ON/OFF ratio was 3.1 x 10(6), and subthreshold swing was 0.44 V/decade. Thus, the proposed scheme provides a simple and practical method of fabricating high-performance, highly transparent IGZO TFTs.
URI: http://dx.doi.org/10.1109/LED.2014.2317943
http://hdl.handle.net/11536/24698
ISSN: 0741-3106
DOI: 10.1109/LED.2014.2317943
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 35
Issue: 6
起始页: 645
结束页: 647
显示于类别:Articles


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