标题: | Highly Transparent, High-Performance IGZO-TFTs Using the Selective Formation of IGZO Source and Drain Electrodes |
作者: | Wu, Hung-Chi Chien, Chao-Hsin 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
关键字: | RTA;self-aligned;IGZO;TFT |
公开日期: | 1-六月-2014 |
摘要: | In this letter, high-performance, highly transparent amorphous InGaZnO (IGZO) thin-film transistors (TFTs) with IGZO source/drain electrodes were fabricated. Rapid thermal annealing treatment effectively converted IGZO from a semiconductor into a conductor. Using a patterned SiO2 capping layer, highly transparent IGZO-TFTs with selectively formed IGZO electrodes were fabricated on a glass substrate. The mobility of the fabricated IGZO-TFT was 8.3 cm(2)/V s, ON/OFF ratio was 3.1 x 10(6), and subthreshold swing was 0.44 V/decade. Thus, the proposed scheme provides a simple and practical method of fabricating high-performance, highly transparent IGZO TFTs. |
URI: | http://dx.doi.org/10.1109/LED.2014.2317943 http://hdl.handle.net/11536/24698 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2014.2317943 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 35 |
Issue: | 6 |
起始页: | 645 |
结束页: | 647 |
显示于类别: | Articles |
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