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dc.contributor.authorChen, CWen_US
dc.contributor.authorChien, CHen_US
dc.contributor.authorPerng, THen_US
dc.contributor.authorYang, MJen_US
dc.contributor.authorLiang, JSen_US
dc.contributor.authorLehnen, Pen_US
dc.contributor.authorTsui, BYen_US
dc.contributor.authorChang, CYen_US
dc.date.accessioned2014-12-08T15:36:22Z-
dc.date.available2014-12-08T15:36:22Z-
dc.date.issued2005-01-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.44.87en_US
dc.identifier.urihttp://hdl.handle.net/11536/24702-
dc.description.abstractWe have investigated the effects that various pre-deposition surface treatments, such as HF dipping (HF-dipped), NH(3) surface nitridation (NH(3)-annealed), and rapid thermal oxidation (RTO-treated), have on the electrical properties of HfO(2) gate dielectrics. The NH(3)-annealed technique is superior to the others because the dielectric subject to NH(3) surface nitridation possesses a tremendously reduced leakage current, the lowest equivalent oxide thickness (EOT),and a moderate, hysteresis width. In contrast, the RTO-treated preparation can only effectively reduce the leakage current by its resultant increased physical thickness and displays considerably severe hysteresis. We have also studied the dependence of hysteresis on the initial inversion bias (V(inv)), temperature, and frequency for-all splits. The hysteresis width increases upon increasing the initial inversion bias and decreasing the temperature, but it is rather insensitive to the measuring frequency. In addition, our experimental results indicate that the hysteresis width depends exponentially on both the initial inversion bias and the temperature, and it can be described well by a general empirical relationship that has the form C(T) (.) exp(R(v)V(inv),). Finally, the conduction currents through the dielectrics are probably dominated by trap-assisted tunneling (TAT) because the current densities display stronger temperature dependence at low voltage than they do at higher voltages. Based on the trap-assisted tunneling model, the corresponding parameters have been extracted and are presented.en_US
dc.language.isoen_USen_US
dc.titleElectrical characteristics of thin HfO(2) gate dielectrics prepared using different pre-deposition surface treatmentsen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.44.87en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERSen_US
dc.citation.volume44en_US
dc.citation.issue1Aen_US
dc.citation.spage87en_US
dc.citation.epage93en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
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