Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ahn, H. | en_US |
dc.contributor.author | Lee, M. -T. | en_US |
dc.contributor.author | Chang, Y. -M. | en_US |
dc.date.accessioned | 2014-12-08T15:36:22Z | - |
dc.date.available | 2014-12-08T15:36:22Z | - |
dc.date.issued | 2014-05-19 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.4878618 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/24711 | - |
dc.description.abstract | We report on the nonlinear optical properties of InN measured in a wide near-infrared spectral range with the femtosecond Z-scan technique. The above-bandgap nonlinear absorption in InN is found to originate from the saturation of absorption by the band-state-filling and its cross-section increases drastically near the bandgap energy. With below-bandgap excitation, the nonlinear absorption undergoes a transition from saturation absorption (SA) to reverse-SA (RSA), attributed to the competition between SA of band-tail states and two-photon-related RSA. The measured large nonlinear refractive index of the order of 10(-10) cm(2)/W indicates InN as a potential material for all-optical switching and related applications. (C) 2014 AIP Publishing LLC. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Spectral dependence of third-order nonlinear optical properties in InN | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.4878618 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 104 | en_US |
dc.citation.issue | 20 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000337140800023 | - |
dc.citation.woscount | 0 | - |
Appears in Collections: | Articles |
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