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dc.contributor.authorAhn, H.en_US
dc.contributor.authorLee, M. -T.en_US
dc.contributor.authorChang, Y. -M.en_US
dc.date.accessioned2014-12-08T15:36:22Z-
dc.date.available2014-12-08T15:36:22Z-
dc.date.issued2014-05-19en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4878618en_US
dc.identifier.urihttp://hdl.handle.net/11536/24711-
dc.description.abstractWe report on the nonlinear optical properties of InN measured in a wide near-infrared spectral range with the femtosecond Z-scan technique. The above-bandgap nonlinear absorption in InN is found to originate from the saturation of absorption by the band-state-filling and its cross-section increases drastically near the bandgap energy. With below-bandgap excitation, the nonlinear absorption undergoes a transition from saturation absorption (SA) to reverse-SA (RSA), attributed to the competition between SA of band-tail states and two-photon-related RSA. The measured large nonlinear refractive index of the order of 10(-10) cm(2)/W indicates InN as a potential material for all-optical switching and related applications. (C) 2014 AIP Publishing LLC.en_US
dc.language.isoen_USen_US
dc.titleSpectral dependence of third-order nonlinear optical properties in InNen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.4878618en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume104en_US
dc.citation.issue20en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000337140800023-
dc.citation.woscount0-
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