完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, CW | en_US |
dc.contributor.author | Chien, CH | en_US |
dc.contributor.author | Chen, YC | en_US |
dc.contributor.author | Hsu, SL | en_US |
dc.contributor.author | Chang, CY | en_US |
dc.date.accessioned | 2014-12-08T15:36:23Z | - |
dc.date.available | 2014-12-08T15:36:23Z | - |
dc.date.issued | 2005 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/24713 | - |
dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.44.L278 | en_US |
dc.description.abstract | We have investigated the electrical characteristics of strained Si0.85Ge0.15 channel p-channel metal-oxide-semiconductor field effect transistors (pMOSFETs) with ultra-thin N2O-annealed SiN gate dielectric. We have found that the thickness of SiGe channel has a great impact on the device characteristics. With controlling the SiGe layer thickness thinner than 15 nm, the device depict a subthreshold swing of 68 mV/A, the interface state density of 1 x 10(11) eV(-1) cm(-2), acceptable junction leakage, and more than 50% hole mobility improvement with respect to the Si channel device. Therefore, high quality interface between the gate dielectric and the strained SiGe channel can be achieved by using the N2O-annealed SiN gate dielectric. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | SiGe channel | en_US |
dc.subject | N2O-annealed | en_US |
dc.subject | SiN gate dielectric | en_US |
dc.subject | dislocation | en_US |
dc.title | Deep sub-micron strained Si0.85Ge0.15 channel p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) with ultra-thin N2O-annealed SiN gate dielectric | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1143/JJAP.44.L278 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | en_US |
dc.citation.volume | 44 | en_US |
dc.citation.issue | 8-11 | en_US |
dc.citation.spage | L278 | en_US |
dc.citation.epage | L281 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000228307000006 | - |
dc.citation.woscount | 12 | - |
顯示於類別: | 期刊論文 |