完整後設資料紀錄
DC 欄位 | 值 | 語言 |
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dc.contributor.author | Laskar, IR | en_US |
dc.contributor.author | Liu, HW | en_US |
dc.contributor.author | Huang, CP | en_US |
dc.contributor.author | Cheng, JA | en_US |
dc.contributor.author | Chen, TM | en_US |
dc.date.accessioned | 2014-12-08T15:36:23Z | - |
dc.date.available | 2014-12-08T15:36:23Z | - |
dc.date.issued | 2005 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/24724 | - |
dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.44.L727 | en_US |
dc.description.abstract | Luminescent CdSe/ZnS core-shell-type quantum dots (QDs) were synthesized by chemical colloidal methods. The photoluminescence (PL) intensity of a triplet emitter [bis(4-trifluoromethyl)-2-phenylbenzothiazolatoacetylacetonate-iridium(III) (Ir complex 1) and bis(4-methyl)-2-phenylbenzothiazolatoacetylacetonate-iridium(III) (Ir-complex 2)] was dramatically enhanced when bluish-green emitting CdSe/ZnS QDs were incorporated into these compounds. Experimental results indicate that the emissive region of QDs substantially overlaps with the low-energy absorption bands of Ir-complexes, indicating that the photons were absorbed by both the QDs and the Ir-complexes and that the energy absorbed by the QDs was transferred efficiently to the Ir-complex triplet emitter, resulting in the observed enhancement of PL intensity. A slow quenching of QDs emission was observed in a prepared set of solutions with gradual increasing of Ir complex concentration at a fixed QDs concentration in thin film PMMA matrix, which supports the energy transfer from Ir complex to QDs. In the fabricated double-layer electroluminescent (EL) devices, the emitting layer contained either only Ir-complex or a mixture of Ir-complex and CdSe/ZnS QDs with a specific molar ratio [Ir-complex/QDs = 1/0 (D-I); 1/0.5 (D-II),..., 1/10 (D-V)]. The EL intensity and the luminance efficiency for D-II were higher (luminescence yield = 19.3cd A(-1)) than those of the other devices. The PL and EL enhancement of the triplet emitter were also strongly supported by using ZnSe QDs rather than CdSe/ZnS QDs. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Observing enhanced phosphorescence and electroluminescence from triplet emitter by quantum dot doping | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1143/JJAP.44.L727 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | en_US |
dc.citation.volume | 44 | en_US |
dc.citation.issue | 20-23 | en_US |
dc.citation.spage | L727 | en_US |
dc.citation.epage | L730 | en_US |
dc.contributor.department | 應用化學系 | zh_TW |
dc.contributor.department | Department of Applied Chemistry | en_US |
dc.identifier.wosnumber | WOS:000259399200197 | - |
dc.citation.woscount | 0 | - |
顯示於類別: | 期刊論文 |