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dc.contributor.authorWang, Yi-Tingen_US
dc.contributor.authorYang, Chun-Kaien_US
dc.contributor.authorLin, Sheng-Dien_US
dc.contributor.authorLiang, Chi-Teen_US
dc.date.accessioned2014-12-08T15:36:24Z-
dc.date.available2014-12-08T15:36:24Z-
dc.date.issued2014-05-01en_US
dc.identifier.issn0374-4884en_US
dc.identifier.urihttp://dx.doi.org/10.3938/jkps.64.1407en_US
dc.identifier.urihttp://hdl.handle.net/11536/24741-
dc.description.abstractWe have performed magneto-transport measurements on a two-dimensional electron system (2DES) which is in close proximity to nanoscaled scatterers. Weak localization, as evidenced by negative magnetoresistance, is observed. In this work, we use the extracted phase coherence rate as a thermometer to measure the electron\'s effective temperature T (e) in our 2DES when a high driving current I flows through the device. We find that T (e) ae I (similar to 0.52), consistent with 1/tau (ep) similar to T (2) in two dimensions, where 1/tau (ep) is the electron-phonon scattering rate. However, the phase coherence rate 1/tau (phi) similar to T, with a very small offset, is consistent with zero-temperature dephasing. Most importantly, our experimental results are in agreement with the fact that at low temperatures, the dominant phase-breaking mechanism is electron-electron scattering, not electron-phonon scattering. Therefore we are able to investigate both electron-electron scattering and electron-phonon scattering which are, in most cases, difficult to study independently in the linear region. Our data show that the electron heating effect is a very powerful tool for studying semiconductor devices.en_US
dc.language.isoen_USen_US
dc.subjectElectron heatingen_US
dc.subjectCurrent scalingen_US
dc.subjectPower lawen_US
dc.titleElectron heating and current scaling in a two-dimensional electron system in close proximity to nanoscale scatterersen_US
dc.typeArticleen_US
dc.identifier.doi10.3938/jkps.64.1407en_US
dc.identifier.journalJOURNAL OF THE KOREAN PHYSICAL SOCIETYen_US
dc.citation.volume64en_US
dc.citation.issue10en_US
dc.citation.spage1407en_US
dc.citation.epage1411en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000337092500003-
dc.citation.woscount1-
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