完整後設資料紀錄
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dc.contributor.authorChou, Bo-Tsunen_US
dc.contributor.authorLin, Sheng-Dien_US
dc.contributor.authorHuang, Bo-Haoen_US
dc.contributor.authorLu, Tien-Changen_US
dc.date.accessioned2014-12-08T15:36:24Z-
dc.date.available2014-12-08T15:36:24Z-
dc.date.issued2014-05-01en_US
dc.identifier.issn1071-1023en_US
dc.identifier.urihttp://dx.doi.org/10.1116/1.4874618en_US
dc.identifier.urihttp://hdl.handle.net/11536/24742-
dc.description.abstractThe authors demonstrate a simple method to fabricate ultrasmooth single-crystalline silver (Ag) films with high reflectivity and low plasmonic damping. The single-crystalline Ag thin film on the clean Si (100) substrate is first deposited by electron-gun evaporator and then treated by rapid thermal annealing (RTA) to improve its quality. The crystal structure and surface morphology are characterized by x-ray diffraction, transmission electron microscopy, and atomic force microscopy. Optical constants of the prepared films are extracted by fitting the measured reflectivity spectra with the Drude model. These results show that the Ag film with 340 degrees C RTA has the best film quality, including small surface roughness of 0.46 nm, a sharp x-ray diffraction peak with FWHM of 0.3 degrees, and lowest damping in the visible and near-infrared wavelength regime. Therefore, our method is not only cost-effective but also useful for fabricating metal-based plasmonic and nanophotonic devices. (C) 2014 American Vacuum Society.en_US
dc.language.isoen_USen_US
dc.titleSingle-crystalline silver film grown on Si (100) substrate by using electron-gun evaporation and thermal treatmenten_US
dc.typeArticleen_US
dc.identifier.doi10.1116/1.4874618en_US
dc.identifier.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY Ben_US
dc.citation.volume32en_US
dc.citation.issue3en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000337061900040-
dc.citation.woscount0-
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