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dc.contributor.authorChia, C. H.en_US
dc.contributor.authorTsai, W. C.en_US
dc.contributor.authorChou, W. C.en_US
dc.date.accessioned2014-12-08T15:36:25Z-
dc.date.available2014-12-08T15:36:25Z-
dc.date.issued2014-04-01en_US
dc.identifier.issn0022-2313en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jlumin.2013.12.006en_US
dc.identifier.urihttp://hdl.handle.net/11536/24754-
dc.description.abstractWe investigated he evolution of structural and low-temperature photoluminescence properties of sol-gel derived ZnO thin films, as a function of pre-heating temperature between 300 degrees C and 600 degrees C. The pre-heating crystallization plays an important role in the lineshape of PL spectra. The increase in pre-heating temperature enables rearrangement of atoms at the pre-heating stage, leading to c-axis oriented growth of films, modification in lineshape of impurity-detect emission, and reduction of deep-level emission intensity. (C) 2013 Elsevier B.V. All rights reserveden_US
dc.language.isoen_USen_US
dc.subjectZnOen_US
dc.subjectSol-gelen_US
dc.subjectPhotoluminescenceen_US
dc.subjectExcitonen_US
dc.titlePreheating-temperature effect on structural and photoluminescent properties of sol-gel derived ZnO thin filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.jlumin.2013.12.006en_US
dc.identifier.journalJOURNAL OF LUMINESCENCEen_US
dc.citation.volume148en_US
dc.citation.issueen_US
dc.citation.spage111en_US
dc.citation.epage115en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000337516000019-
dc.citation.woscount2-
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