标题: Electron-beam Evaporation of Distinctive Indium-tin-oxide Nanorods for Enhanced Light Extraction from InGaN/GaN Light Emitting Diodes
作者: Chiu, C. H.
Yu, Peichen
Tsai, M. A.
Kuo, H. C.
光电工程学系
Department of Photonics
公开日期: 2009
摘要: In this paper, we present a novel and mass-producible technique to fabricate indium-tin-oxide (ITO) nanorods arrays on InGaN/GaN light em itting diodes (LEDs) surface to be served as an omnidirectional transparent conductive layer. The characteristics nanorods, prepared by the electron-beam evaporation with an obliquely incident nitrogen flux on an ITO glass, demonstrate high optical tran smittance ( T>95%) for a broad wavelength ranging from 350 to 900 nm. The light output power of an InGaN/GaN LED with incorporated ITO nanorods increases by 35.1 % at an injection current of 350 mA, compared to a conventional LED. The higher efficiency is attributed to the better transmission and gradient refractive index resulted from the fabricated ITO nanorod on the surface.
URI: http://hdl.handle.net/11536/24794
http://dx.doi.org/10.1149/1.3238207
ISBN: 978-1-56677-749-0; 978-1-60768-099-4
ISSN: 1938-5862
DOI: 10.1149/1.3238207
期刊: STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS 51 (SOTAPOCS 51) -AND- WIDE-BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 10
Volume: 25
Issue: 12
起始页: 55
结束页: 61
显示于类别:Conferences Paper