标题: | Electron-beam Evaporation of Distinctive Indium-tin-oxide Nanorods for Enhanced Light Extraction from InGaN/GaN Light Emitting Diodes |
作者: | Chiu, C. H. Yu, Peichen Tsai, M. A. Kuo, H. C. 光电工程学系 Department of Photonics |
公开日期: | 2009 |
摘要: | In this paper, we present a novel and mass-producible technique to fabricate indium-tin-oxide (ITO) nanorods arrays on InGaN/GaN light em itting diodes (LEDs) surface to be served as an omnidirectional transparent conductive layer. The characteristics nanorods, prepared by the electron-beam evaporation with an obliquely incident nitrogen flux on an ITO glass, demonstrate high optical tran smittance ( T>95%) for a broad wavelength ranging from 350 to 900 nm. The light output power of an InGaN/GaN LED with incorporated ITO nanorods increases by 35.1 % at an injection current of 350 mA, compared to a conventional LED. The higher efficiency is attributed to the better transmission and gradient refractive index resulted from the fabricated ITO nanorod on the surface. |
URI: | http://hdl.handle.net/11536/24794 http://dx.doi.org/10.1149/1.3238207 |
ISBN: | 978-1-56677-749-0; 978-1-60768-099-4 |
ISSN: | 1938-5862 |
DOI: | 10.1149/1.3238207 |
期刊: | STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS 51 (SOTAPOCS 51) -AND- WIDE-BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 10 |
Volume: | 25 |
Issue: | 12 |
起始页: | 55 |
结束页: | 61 |
显示于类别: | Conferences Paper |