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dc.contributor.authorLAI, CHen_US
dc.contributor.authorTSENG, TYen_US
dc.date.accessioned2014-12-08T15:03:58Z-
dc.date.available2014-12-08T15:03:58Z-
dc.date.issued1994-06-01en_US
dc.identifier.issn1070-9886en_US
dc.identifier.urihttp://dx.doi.org/10.1109/95.296415en_US
dc.identifier.urihttp://hdl.handle.net/11536/2482-
dc.description.abstractAC electrical properties of positive temperature coefficient of resistance (PTCR) ceramics of composition Ba0.347Pb0.65La0.003Ca0.005Ti0.995O3 with Curie point Tc almost-equal-to 380-degrees-C were studied. A combined imaginary impedance/modulus plot was adopted to identify the appropriate equivalent circuit. Analysis of such circuit modified with a frequency dependent capacitor C(n) gives satisfactory interpretation of the commonly observed inclined semicircle in the complex impedance plane. The exponent n, which is extracted from the depression angle and suggested to be associated with the ''loss'' degree of the material, shows a temperature dependence similar to that of a useful parameter extracted from the ac conductivity-frequency measurements. Both are ascribed to he conduction characteristics of the grain boundary, whose resistivity anomaly is the main contribution to PTCR jump. The validity of the present methodology is assessed not only by fitting well the observed non-ideality of real ac response, but also by confirming the Curie-Weiss behavior of the calculated grain boundary capacitance, which is the essence of well-accepted barrier theory (Heywang-Jonker model) proposed to explain the PTCR effect.en_US
dc.language.isoen_USen_US
dc.titleANALYSIS OF THE AC ELECTRICAL RESPONSE FOR (BA,PB)TIO3 POSITIVE TEMPERATURE-COEFFICIENT CERAMICSen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/95.296415en_US
dc.identifier.journalIEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY PART Aen_US
dc.citation.volume17en_US
dc.citation.issue2en_US
dc.citation.spage309en_US
dc.citation.epage315en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1994NZ21800019-
dc.citation.woscount8-
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