Rolling up Ge microtube from bare-Ge substrate

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DC Field	Value	Language
dc.contributor.author	Chen, C. H.	en_US
dc.contributor.author	Niu, H.	en_US
dc.contributor.author	Huang, R. T.	en_US
dc.contributor.author	Lee, C. P.	en_US
dc.date.accessioned	2014-12-08T15:36:29Z	-
dc.date.available	2014-12-08T15:36:29Z	-
dc.date.issued	2014-08-15	en_US
dc.identifier.issn	0169-4332	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/j.apsusc.2014.03.073	en_US
dc.identifier.uri	http://hdl.handle.net/11536/24831	-
dc.description.abstract	We show Ge microtubes can be rolled-up from bare-Ge wafer at almost any position, once these films are released from its substrate. (C) 2014 Elsevier B.V. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	Germanium	en_US
dc.subject	Rolled-up microtube	en_US
dc.subject	Ion-cut	en_US
dc.title	Rolling up Ge microtube from bare-Ge substrate	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/j.apsusc.2014.03.073	en_US
dc.identifier.journal	APPLIED SURFACE SCIENCE	en_US
dc.citation.volume	310	en_US
dc.citation.issue		en_US
dc.citation.spage	214	en_US
dc.citation.epage	216	en_US
dc.contributor.department	奈米科技中心	zh_TW
dc.contributor.department	Center for Nanoscience and Technology	en_US
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