Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lo, Shun-Tsung | en_US |
dc.contributor.author | Hsu, Chang-Shun | en_US |
dc.contributor.author | Lin, Y. M. | en_US |
dc.contributor.author | Lin, S-D | en_US |
dc.contributor.author | Lee, C. P. | en_US |
dc.contributor.author | Ho, Sheng-Han | en_US |
dc.contributor.author | Chuang, Chiashain | en_US |
dc.contributor.author | Wang, Yi-Ting | en_US |
dc.contributor.author | Liang, C-T | en_US |
dc.date.accessioned | 2014-12-08T15:36:33Z | - |
dc.date.available | 2014-12-08T15:36:33Z | - |
dc.date.issued | 2014-07-07 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.4889847 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/24883 | - |
dc.description.abstract | We study interference and interactions in an InAs/InAsSb two-dimensional electron system. In such a system, spin-orbit interactions are shown to be strong, which result in weak antilocalization (WAL) and thereby positive magnetoresistance around zero magnetic field. After suppressing WAL by the magnetic field, we demonstrate that classical positive magnetoresistance due to spin-orbit coupling plays a role. With further increasing the magnetic field, the system undergoes a direct insulator-quantum Hall transition. By analyzing the magnetotransport behavior in different field regions, we show that both electron-electron interactions and spin-related effects are essential in understanding the observed direct transition. (C) 2014 AIP Publishing LLC. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Insulating state to quantum Hall-like state transition in a spin-orbit-coupled two-dimensional electron system | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.4889847 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 105 | en_US |
dc.citation.issue | 1 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000339664900044 | - |
dc.citation.woscount | 1 | - |
Appears in Collections: | Articles |
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