完整後設資料紀錄
DC 欄位語言
dc.contributor.authorLo, Shun-Tsungen_US
dc.contributor.authorHsu, Chang-Shunen_US
dc.contributor.authorLin, Y. M.en_US
dc.contributor.authorLin, S-Den_US
dc.contributor.authorLee, C. P.en_US
dc.contributor.authorHo, Sheng-Hanen_US
dc.contributor.authorChuang, Chiashainen_US
dc.contributor.authorWang, Yi-Tingen_US
dc.contributor.authorLiang, C-Ten_US
dc.date.accessioned2014-12-08T15:36:33Z-
dc.date.available2014-12-08T15:36:33Z-
dc.date.issued2014-07-07en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4889847en_US
dc.identifier.urihttp://hdl.handle.net/11536/24883-
dc.description.abstractWe study interference and interactions in an InAs/InAsSb two-dimensional electron system. In such a system, spin-orbit interactions are shown to be strong, which result in weak antilocalization (WAL) and thereby positive magnetoresistance around zero magnetic field. After suppressing WAL by the magnetic field, we demonstrate that classical positive magnetoresistance due to spin-orbit coupling plays a role. With further increasing the magnetic field, the system undergoes a direct insulator-quantum Hall transition. By analyzing the magnetotransport behavior in different field regions, we show that both electron-electron interactions and spin-related effects are essential in understanding the observed direct transition. (C) 2014 AIP Publishing LLC.en_US
dc.language.isoen_USen_US
dc.titleInsulating state to quantum Hall-like state transition in a spin-orbit-coupled two-dimensional electron systemen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.4889847en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume105en_US
dc.citation.issue1en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000339664900044-
dc.citation.woscount1-
顯示於類別:期刊論文


文件中的檔案:

  1. 000339664900044.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。