Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Tsai, Wan-Lin | en_US |
dc.contributor.author | Huang, Bai-Tao | en_US |
dc.contributor.author | Wang, Kuang-Yu | en_US |
dc.contributor.author | Huang, Yu-Chih | en_US |
dc.contributor.author | Yang, Po-Yu | en_US |
dc.contributor.author | Cheng, Huang-Chung | en_US |
dc.date.accessioned | 2014-12-08T15:36:33Z | - |
dc.date.available | 2014-12-08T15:36:33Z | - |
dc.date.issued | 2014-07-01 | en_US |
dc.identifier.issn | 1536-125X | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/TNANO.2014.2318710 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/24889 | - |
dc.description.abstract | The oxygen-plasma-functionalized carbon nanotube thin films on the flexible substrates as the pH sensing membranes of extended-gate field-effect transistors are proposed for the first time. The carbon nanotubes are ultrasonically sprayed onto the polyimide substrates followed by an oxygen-plasma functionalization. Such oxygen-plasma-treated carbon nanotube thin films (CNTFs) exhibit superior pH sensing characteristics with the sensitivity of 55.7 mV/pH and voltage linearity of 0.9996 in a wide sensing range of pH 1-13. Moreover, the excellent flexibility of carbon nanotube is also demonstrated and the oxygen-plasma-treated CNTFs still maintain the sensitivity of 53.6 mV/pH and voltage linearity of 0.9943 even after five-cycle bending test. These results reveal that the oxygen-plasma-treated CNTFs have great potentials in the practically disposal and wearable biosensor applications. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Biosensors | en_US |
dc.subject | carbon nanotube (CNT) | en_US |
dc.subject | extended-gate field-effect transistors (EGFETs) | en_US |
dc.subject | flexible substrates | en_US |
dc.title | Functionalized Carbon Nanotube Thin Films as the pH Sensing Membranes of Extended-Gate Field-Effect Transistors on the Flexible Substrates | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/TNANO.2014.2318710 | en_US |
dc.identifier.journal | IEEE TRANSACTIONS ON NANOTECHNOLOGY | en_US |
dc.citation.volume | 13 | en_US |
dc.citation.issue | 4 | en_US |
dc.citation.spage | 760 | en_US |
dc.citation.epage | 766 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000340104900018 | - |
dc.citation.woscount | 0 | - |
Appears in Collections: | Articles |
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