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dc.contributor.authorTsai, Wan-Linen_US
dc.contributor.authorHuang, Bai-Taoen_US
dc.contributor.authorWang, Kuang-Yuen_US
dc.contributor.authorHuang, Yu-Chihen_US
dc.contributor.authorYang, Po-Yuen_US
dc.contributor.authorCheng, Huang-Chungen_US
dc.date.accessioned2014-12-08T15:36:33Z-
dc.date.available2014-12-08T15:36:33Z-
dc.date.issued2014-07-01en_US
dc.identifier.issn1536-125Xen_US
dc.identifier.urihttp://dx.doi.org/10.1109/TNANO.2014.2318710en_US
dc.identifier.urihttp://hdl.handle.net/11536/24889-
dc.description.abstractThe oxygen-plasma-functionalized carbon nanotube thin films on the flexible substrates as the pH sensing membranes of extended-gate field-effect transistors are proposed for the first time. The carbon nanotubes are ultrasonically sprayed onto the polyimide substrates followed by an oxygen-plasma functionalization. Such oxygen-plasma-treated carbon nanotube thin films (CNTFs) exhibit superior pH sensing characteristics with the sensitivity of 55.7 mV/pH and voltage linearity of 0.9996 in a wide sensing range of pH 1-13. Moreover, the excellent flexibility of carbon nanotube is also demonstrated and the oxygen-plasma-treated CNTFs still maintain the sensitivity of 53.6 mV/pH and voltage linearity of 0.9943 even after five-cycle bending test. These results reveal that the oxygen-plasma-treated CNTFs have great potentials in the practically disposal and wearable biosensor applications.en_US
dc.language.isoen_USen_US
dc.subjectBiosensorsen_US
dc.subjectcarbon nanotube (CNT)en_US
dc.subjectextended-gate field-effect transistors (EGFETs)en_US
dc.subjectflexible substratesen_US
dc.titleFunctionalized Carbon Nanotube Thin Films as the pH Sensing Membranes of Extended-Gate Field-Effect Transistors on the Flexible Substratesen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TNANO.2014.2318710en_US
dc.identifier.journalIEEE TRANSACTIONS ON NANOTECHNOLOGYen_US
dc.citation.volume13en_US
dc.citation.issue4en_US
dc.citation.spage760en_US
dc.citation.epage766en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000340104900018-
dc.citation.woscount0-
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