標題: | LONGITUDINAL-OPTICAL-PHONON EFFECTS ON THE EXCITON BINDING-ENERGY IN A SEMICONDUCTOR QUANTUM-WELL |
作者: | CHUU, DS WON, WL PEI, JH 電子物理學系 物理研究所 Department of Electrophysics Institute of Physics |
公開日期: | 15-五月-1994 |
摘要: | The longitudinal-optical-phonon effect on the exciton binding energies in a quantum well consisting of a single slab of GaAs sandwiched between two semi-infinite slabs of Ga1-xAlxAs are studied. By using the Lee-Low-Pine unitary transformation, the Hamiltonian can be separated into two parts which contain the phonon variables and exciton variables, respectively, providing that the virtual phonon-electron and virtual phonon-hole interactions are neglected. A trial wave function, which is able to reproduce the correct exciton binding energy in a quantum well, is obtained by using a perturbative variational technique. The trial wave function consists of a product of the envelope function in the z direction (perpendicular to the layers) for electron and hole and a purely two-dimensional exciton wave function. The dependence of the ground-state binding energy, which includes the effect of electron-phonon interaction on the well width, is investigated. It is found that the correction due to polaron effects on the exciton binding energy is quite significant for a well width of several hundred angstroms and the effects of either surface phonons or bulk phonons on the binding energy of the heavy-hole exciton is always larger than that of the light-hole exciton. Our results are compared with some previous results, and satisfactory agreements are obtained. |
URI: | http://dx.doi.org/10.1103/PhysRevB.49.14554 http://hdl.handle.net/11536/2489 |
ISSN: | 0163-1829 |
DOI: | 10.1103/PhysRevB.49.14554 |
期刊: | PHYSICAL REVIEW B |
Volume: | 49 |
Issue: | 20 |
起始頁: | 14554 |
結束頁: | 14563 |
顯示於類別: | 期刊論文 |