Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | CHANG, PH | en_US |
dc.contributor.author | CHEN, HM | en_US |
dc.contributor.author | LIU, HY | en_US |
dc.contributor.author | BOHLMAN, JG | en_US |
dc.date.accessioned | 2014-12-08T15:03:59Z | - |
dc.date.available | 2014-12-08T15:03:59Z | - |
dc.date.issued | 1994-05-15 | en_US |
dc.identifier.issn | 0022-2461 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1007/BF00356820 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/2491 | - |
dc.description.abstract | The interaction of Al-1 wt% Si with a W-Ti barrier layer in the Al/Ti3W7/SiO2/Si system was studied over the temperature range of 400-500-degrees-C for reaction times up to 300 h. The interaction was found to be diffusion-controlled, and to occur in a layer-by-layer fashion. The first reaction product is always Al12W, which forms at the Al/Ti3W7 interface. With excess W in the system, Al will eventually be completely converted to Al12W, and further interactions result in the formation of an Al4W layer at the Al12W/Ti3W7 interface. The amount of Al4W increases at the expense of Al12W. Ti plays a minor role in the interaction and forms a small amount of Al3Ti precipitates in the Al12W matrix. Decomposition of the Ti3W7 pseudoalloy into W and Ti phases is not significant, and is not detected by X-ray diffraction even after annealing at 500-degrees-C for 300 h. The kinetics of the Al12W formation follows a parabolic reaction law with an activation energy of 2.53 eV. The sheet resistance of the film is insensitive to compound formation as long as a continuous Al film exists in the system. The sheet resistance increases dramatically when Al is consumed to the extent that it is no longer a continuous film. The sheet resistance of the Al12W layer is estimated to be 570 mOMEGA square-1. | en_US |
dc.language.iso | en_US | en_US |
dc.title | INTERACTIONS BETWEEN AL-1 WT-PERCENT SI THIN-FILM AND W-TI BARRIER LAYER | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1007/BF00356820 | en_US |
dc.identifier.journal | JOURNAL OF MATERIALS SCIENCE | en_US |
dc.citation.volume | 29 | en_US |
dc.citation.issue | 10 | en_US |
dc.citation.spage | 2697 | en_US |
dc.citation.epage | 2703 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:A1994NP10100018 | - |
dc.citation.woscount | 1 | - |
Appears in Collections: | Articles |