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dc.contributor.authorWang, Hsiao-Tsungen_US
dc.contributor.authorLin, Jia-Deen_US
dc.contributor.authorLee, Chia-Rongen_US
dc.contributor.authorLee, Weien_US
dc.date.accessioned2014-12-08T15:36:35Z-
dc.date.available2014-12-08T15:36:35Z-
dc.date.issued2014-06-15en_US
dc.identifier.issn0146-9592en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OL.39.003516en_US
dc.identifier.urihttp://hdl.handle.net/11536/24929-
dc.description.abstractIn this Letter, we propose defect-mode lasing from a one-dimensional asymmetric photonic structure with dye-doped nematic liquid crystal as a central defect layer. The local field intensity of the distinguished single defect mode at the overlapped photonic band edges is drastically enhanced by the asymmetric structure consisting of two distinct multilayer photonic crystals. With high density of states of photons, effective output lasing emission and maximum input excitation are ensured. As a result, the single-mode lasing with a low excitation threshold of 0.2 mu J/pulse is achieved due to the combination of the defect layer and the photonic band edge effect. (C) 2014 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleUltralow-threshold single-mode lasing based on a one-dimensional asymmetric photonic bandgap structure with liquid crystal as a defect layeren_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OL.39.003516en_US
dc.identifier.journalOPTICS LETTERSen_US
dc.citation.volume39en_US
dc.citation.issue12en_US
dc.citation.spage3516en_US
dc.citation.epage3519en_US
dc.contributor.department光電學院zh_TW
dc.contributor.departmentCollege of Photonicsen_US
dc.identifier.wosnumberWOS:000338870500040-
dc.citation.woscount1-
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