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dc.contributor.authorLai, Ying-Yuen_US
dc.contributor.authorChou, Yu-Hsunen_US
dc.contributor.authorWu, Yu-Shengen_US
dc.contributor.authorLan, Yu-Pinen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.date.accessioned2014-12-08T15:36:36Z-
dc.date.available2014-12-08T15:36:36Z-
dc.date.issued2014-06-01en_US
dc.identifier.issn1882-0778en_US
dc.identifier.urihttp://dx.doi.org/10.7567/APEX.7.062101en_US
dc.identifier.urihttp://hdl.handle.net/11536/24935-
dc.description.abstractIn this work, we have developed a simple GaN-based microcavity (MC) with an intracavity shallow etched mesa. The textured GaN-based MC incorporated two high-reflectivity dielectric Bragg mirrors and an InGaN/GaN multiple quantum well with a shallow etched mesa as an optical confined structure. Lasing and transverse optical confinement characteristics have been verified by measuring devices with different mesa diameters. A quality factor (Q) of 2600 and a threshold energy of 30 nJ have been observed in a 10-mu m-diameter device. Such a cavity structure could be implanted into electrically pumped GaN vertical-cavity surface-emitting lasers for supporting efficient transverse confinement. (C) 2014 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleFabrication and characteristics of a GaN-based microcavity laser with shallow etched mesaen_US
dc.typeArticleen_US
dc.identifier.doi10.7567/APEX.7.062101en_US
dc.identifier.journalAPPLIED PHYSICS EXPRESSen_US
dc.citation.volume7en_US
dc.citation.issue6en_US
dc.citation.spageen_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
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