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dc.contributor.authorHsu, Hung-Jungen_US
dc.contributor.authorLiang, Shin-Weien_US
dc.contributor.authorHuang, Yen-Tangen_US
dc.contributor.authorHsu, Cheng-Hangen_US
dc.contributor.authorTsai, Chuang-Chuangen_US
dc.date.accessioned2014-12-08T15:36:36Z-
dc.date.available2014-12-08T15:36:36Z-
dc.date.issued2014-05-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.7567/JJAP.53.05FV09en_US
dc.identifier.urihttp://hdl.handle.net/11536/24941-
dc.description.abstractIn this work, the development of plasma-enhanced chemical vapor deposition (PECVD) mu c-SiOx:H(n) and its application to a-Si:H/a-Si1-xGex:H tandem cells as the intermediate reflecting layer (IRL) and back reflector (BR) is presented. The n-type microcrystalline silicon oxide [mu c-SiOx:H(n)] was used as multifunctional layers in silicon thin-film solar cells owing to its wide bandgap and low refractive index. In the development of mu c-SiOx:H(n), increasing RF power increased film oxygen content, which widened the bandgap while reducing dark conductivity. Applying the mu c-SiOx:H to a-Si:H/a-Si1-xGex:H tandem cells as IRL and BR significantly improved cell performance. The mu c-SiOx:H(n) IRL increases the current of the top cell, thus improving the light management in a-Si:H/a-Si1-xGex:H tandem cells. On the other hand, the mu c-SiOx:H(n) can be used as the BR replacing the n-type a-Si:H and ITO layers. The mu c-SiOx:H increased cell conversion efficiency by 12.9% as IRL, and by 9.7% as BR, achieving 10.03% efficiency. (C) 2014 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleImproved light management in a-Si:H/a-Si1-xGex:H tandem cells by employing multi-functional n-type microcrystalline silicon oxideen_US
dc.typeArticleen_US
dc.identifier.doi10.7567/JJAP.53.05FV09en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume53en_US
dc.citation.issue5en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000338316200139-
dc.citation.woscount0-
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