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dc.contributor.authorLee, Shih-Changen_US
dc.contributor.authorWen, Tzu-Chien_US
dc.contributor.authorLee, Wei-Ien_US
dc.date.accessioned2014-12-08T15:36:37Z-
dc.date.available2014-12-08T15:36:37Z-
dc.date.issued2000en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://hdl.handle.net/11536/24952-
dc.description.abstractThe Al-oxide formed by wet-thermal oxidation of AlAs is used as the anti-reflection (AR) coating of the GaAs solar cell. Results of spectral response measurement suggest that the interfacial recombination velocity is extremely high at the Al-oxide/GaAs interface. Adding a 20-nm-thick Al0.4Ga0.6As barrier layer between the Al-oxide and the GaAs emitter can reduce the influence of interfacial recombination and enhance the performance of the GaAs solar cell. The energy conversion efficiency of the GaAs solar cell utilizing the wet oxidation of AlAs to form the AR coating is 19.43% under the luminescence condition of one-sun, AM 1.5G and 100 mW/cm(2).en_US
dc.language.isoen_USen_US
dc.subjectwet oxidationen_US
dc.subjectAlAsen_US
dc.subjectsolar cellen_US
dc.subjectAR coatingen_US
dc.subjectGaAsen_US
dc.subjectinterface recombinationen_US
dc.titleStudy the Al-oxide/GaAs Interface Characteristics by Spectral Response of GaAs Solar Cellsen_US
dc.typeArticleen_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume39en_US
dc.citation.issue1en_US
dc.citation.spage382en_US
dc.citation.epage384en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000209019800135-
dc.citation.woscount0-
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