標題: ASYMMETRIC DARK CURRENT IN QUANTUM-WELL INFRARED PHOTODETECTORS
作者: TSAI, KL
LEE, CP
CHANG, KH
LIU, DC
CHEN, HR
TSANG, JS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2-May-1994
摘要: Asymmetric dark current versus voltage characteristics in quantum weil infrared photodetectors have been studied. A model based on asymmetrical potential barriers was proposed. The asymmetrical potential barriers, which are most likely due to the accumulation of oxygen impurities at one of the interfaces, cause the asymmetrical I-V characteristics. The height of the potential spike is found to increase with the Al content in the AlGaAs barriers. Calculations based on our model agree well with experimental results.
URI: http://dx.doi.org/10.1063/1.111591
http://hdl.handle.net/11536/2495
ISSN: 0003-6951
DOI: 10.1063/1.111591
期刊: APPLIED PHYSICS LETTERS
Volume: 64
Issue: 18
起始頁: 2436
結束頁: 2438
Appears in Collections:Articles