標題: | The effect of pulsewidth on preparing CuIn1-xGaxSe2 thin film via pulse laser deposition |
作者: | Chen, Shih-Chen Wu, Kaung-Hsiung Lai, Fang-I Kobayashi, Takayoshi Kuo, Hao-Chung 電子物理學系 Department of Electrophysics |
關鍵字: | charge carrier lifetime;photovoltaic cells |
公開日期: | 2013 |
摘要: | We prepared CIGS thin films by pulsed laser deposition (PLD), the pulsewidth of the laser sources are nanosecond(ns) and femtosecond(fs), respectively. We compared their surface morphologies by scanning electron microscopy images. Following, we analyzed their crystal structure utilizing X-ray diffraction, and Raman spectroscopy. Finally, the ultrafast carrier dynamics measured by optical pump-optical probe (OPOP) system. The results of these measurements reveal the better chalcopyprite structure in fs PLD CIGS. And we obtained lower defect-related non-radiative recombination rate in fs PLD CIGS by using OPOP spectroscopy, reflecting a better quality with higher energy conversion efficiency of them. |
URI: | http://hdl.handle.net/11536/25001 |
ISBN: | 978-1-4799-3299-3 |
ISSN: | 0160-8371 |
期刊: | 2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) |
起始頁: | 365 |
結束頁: | 367 |
顯示於類別: | 會議論文 |